Data Sheet

ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA 20 V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
1 µA
T
J
=125°C
10 µA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
100 nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -8 V, V
DS
= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
0.5 0.7 1 V
T
J
=125°C 0.3 0.53 0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 2.7 V, I
D
= 1.3 A
0.15 0.21
Ω
T
J
=125°C 0.24 0.4
V
GS
= 4.5 V, I
D
= 1.5 A
0.11 0.16
I
D(ON)
On-State Drain Current V
GS
= 2.7 V, V
DS
= 5 V 3 A
V
GS
= 4.5 V, V
DS
= 5 V
4
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 1.3 A, 3.5 S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
162 pF
C
oss
Output Capacitance 85 pF
C
rss
Reverse Transfer Capacitance 28 pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= 5 V, I
D
= 1 A,
V
GS
= 5 V, R
Gen
= 6 Ω
5 20 ns
t
r
Turn - On Rise Time 25 40 ns
t
D(off)
Turn - Off Delay Time 10 20 ns
t
f
Turn - Off Fall Time 5 20 ns
Q
g
Total Gate Charge
V
DS
= 5 V, I
D
= 1.3 A,
V
GS
= 4.5 V
3.5 5 nC
Q
gs
Gate-Source Charge 0.3 nC
Q
gd
Gate-Drain Charge 1 nC
NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor
www.onsemi.com
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