Datasheet

NCV8873
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (−40°C < T
J
< 150°C, 3.2 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic UnitMaxTypMinConditionsSymbol
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
g
m,vea
V
FB
– V
ref
= ± 20 mV 0.8 1.2 1.5 mS
VEA output resistance R
o,vea
2.0 − −
MW
VFB input bias current I
vfb,bias
Current out of VFB pin − 0.5 2.0
mA
Reference voltage V
ref
0.194 0.200 0.206 V
VEA maximum output voltage V
c,max
2.5 − − V
VEA minimum output voltage V
c,min
− − 0.3 V
VEA sourcing current I
src,vea
VEA output current, Vc = 2.0 V 80 100 −
mA
VEA sinking current I
snk,vea
VEA output current, Vc = 0.7 V 80 100 −
mA
GATE DRIVER
Sourcing current
I
src
V
DRV
≥ 6 V, V
DRV
− V
GDRV
= 2 V
YY = 00
600 800 −
mA
Sinking current I
sink
V
GDRV
≥ 2 V
YY = 00
500 600 −
mA
Driving voltage dropout V
drv,do
V
IN
− V
DRV
, Iv
DRV
= 25 mA − 0.3 0.6 V
Driving voltage source current I
drv
V
IN
− V
DRV
= 1 V 35 45 − mA
Backdrive diode voltage drop V
d,bd
V
DRV
− V
IN
, I
d,bd
= 5 mA − − 0.7 V
Driving voltage V
DRV
I
VDRV
= 0.1 − 25 mA
YY = 00
6.0 6.3 6.6
V
UVLO
Undervoltage lock−out,
Threshold voltage
V
uvlo
V
IN
falling 2.95 3.05 3.15 V
Undervoltage lock−out,
Hysteresis
V
uvlo,hys
V
IN
rising 50 150 250 mV
THERMAL SHUTDOWN
Thermal shutdown threshold
T
sd
T
J
rising 160 170 180 °C
Thermal shutdown hysteresis T
sd,hys
T
J
falling 10 15 20 °C
Thermal shutdown delay t
sd,dly
From T
J
> T
sd
to stop switching − − 100 ns