Datasheet

NCP3065, NCV3065
http://onsemi.com
3
MAXIMUM RATINGS (measured vs. pin 4, unless otherwise noted)
Rating
Symbol Value Unit
V
CC
(Pin 6) V
CC
0 to +40 V
Comparator Inverting Input (Pin 5) V
CII
−0.2 to +V
CC
V
Darlington Switch Collector (Pin 1) V
SWC
0 to +40 V
Darlington Switch Emitter (Pin 2) (Transistor OFF) V
SWE
−0.6 to +V
CC
V
Darlington Switch Collector to Emitter (Pins 1−2) V
SWCE
0 to +40 V
Darlington Switch Current I
SW
1.5 A
I
pk
Sense (Pin 7) V
IPK
−0.2 to V
CC
+ 0.2 V
Timing Capacitor (Pin 3) V
TCAP
−0.2 to +1.4 V
Power Dissipation and Thermal Characteristics
PDIP−8
Thermal Resistance Junction−to−Air
R
q
JA
100
°C/W
SOIC−8
Thermal Resistance Junction−to−Air
R
q
JA
180
°C/W
DFN−8
Thermal Resistance Junction−to−Air
Thermal Resistance Junction−to−Case
R
q
JA
R
q
JC
78
14
°C/W
Storage Temperature Range T
STG
−65 to +150 °C
Maximum Junction Temperature T
J(MAX)
+150 °C
Operating Junction Temperature Range (Note 3)
NCP3065, NCV3065
T
J
−40 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Pin 1−8: Human Body Model 2000 V per AEC Q100−002; 003 or JESD22/A114; A115
Machine Model Method 200 V
2. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
3. The relation between junction temperature, ambient temperature and Total Power dissipated in IC is T
J
= T
A
+ R
q
•
P
D
4. The pins which are not defined may not be loaded by external signals