Datasheet
NCP1028
http://onsemi.com
4
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage on all Pins, Except Pin 5 (Drain) V
CC
-0.3 to 10 V
Drain Voltage BVdss -0.3 to 700 V
Drain Current Peak During Transformer Saturation IDS(pk) 1.8 A
Maximum Current into Pin 1 when Activating the 8.7 V Active Clamp I_V
CC
15 mA
Thermal Resistance, Junction-to-Air – PDIP7 R
q
JA
100 °C/W
Thermal Resistance, Junction-to-Air – PDIP7 with 1.0 cm@ of 35 m Copper Area R
q
JA
75 °C/W
Maximum Junction Temperature TJ
MAX
150 °C
Storage Temperature Range - -60 to +150 °C
ESD Capability, Human Body Model (HBM) (All Pins Except HV) - 2.0 kV
ESD Capability, Machine Model (MM) - 200 V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per Mil-Std-883, Method 3015.
Machine Model Method 200 V.
2. This device contains latchup protection and exceeds 100 mA per JEDEC Standard JESD78.
ELECTRICAL CHARACTERISTICS (For typical values T
J
= 25°C, for min/max values T
J
= 0°C to +125°C, Max T
J
= 150°C,
V
CC
= 8.0 V, unless otherwise noted.)
Characteristic Pin Symbol Min Typ Max Unit
SUPPLY SECTION AND V
CC
MANAGEMENT
V
CC
Increasing Level at which the Switcher Starts to Operate 1 VCC
ON
7.9 8.5 8.9 V
V
CC
Decreasing Level at which the Switcher Stops Operation 1 VCC
(min)
6.7 7.2 7.9 V
Hysteresis between VCC
ON
and VCC
(min)
- VCC
hyste
- 1.2 - V
Offset Voltage above VCC
ON
at which the Internal Clamp Activates 1 VCC
clamp
140 200 300 mV
V
CC
Voltage at which the Internal Latch is Reset 1 VCC
reset
- 4.0 - V
Internal IC Consumption, MOSFET Switching at 65 kHz or 100 kHz 1 ICC1 - 1.4 1.9 mA
POWER SWITCH CIRCUIT
Power Switch Circuit On-State Resistance
NCP1028 (Id = 100 mA)
T
J
= 25°C
T
J
= 125°C
5 R
DS(on)
-
-
5.8
9.8
7.0
11
W
Power Switch Circuit and Startup Breakdown Voltage
(ID
(off)
= 120 mA, T
J
= 25°C)
5 BVdss 700 - - V
Power Switch and Startup Breakdown Voltage Off-State
Leakage Current
T
J
= 25°C (Vds = 700 V)
T
J
= 125°C (Vds = 700 V)
5
5
Idss(OFF)
-
-
50
30
-
-
mA
Switching Characteristics (RL = 50 W, Vds Set for
Idrain = 0.7 x Ilim)
Turn-on Time (90%-10%)
Turn-off Time (10%-90%)
5
5
t
on
t
off
-
-
35
35
-
-
ns
ns
INTERNAL STARTUP CURRENT SOURCE
High-Voltage Current Source, V
CC
= VCC
ON
– 200 mV 1 IC1 3.5 6.0 8.0 mA
High-Voltage Current Source, V
CC
= 0 1 IC2 350 650 900 mA
V
CC
Transition Level for IC1 to IC2 Toggling Point 1 V
CCTh
- 1.3 - V