Datasheet

MTD3055V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 µAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
−
65
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
10
100
µAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0) I
GSS
− − 100 nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 µAdc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
−
2.7
5.4
4.0
−
Vdc
mV/°C
Static Drain−Source On−Resistance (V
GS
= 10 Vdc, I
D
= 6.0 Adc) R
DS(on)
− 0.10 0.15 Ohm
Drain−Source On−Voltage (V
GS
= 10 Vdc)
(I
D
= 12 Adc)
(I
D
= 6.0 Adc, T
J
= 150°C)
V
DS(on)
−
−
1.3
−
2.2
1.9
Vdc
Forward Transconductance (V
DS
= 7.0 Vdc, I
D
= 6.0 Adc) g
FS
4.0 5.0 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0Vd
C
iss
− 410 500 pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz
)
C
oss
− 130 180
Reverse Transfer Capacitance
f
=
1
.
0
MHz)
C
rss
− 25 50
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
t
d(on)
− 7.0 10 ns
Rise Time
(V
DD
= 30 Vdc, I
D
= 12 Adc,
V
GS
=10Vdc
t
r
− 34 60
Turn−Off Delay Time
V
GS
= 10 Vdc,
R
G
= 9.1 Ω)
t
d(off)
− 17 30
Fall Time
R
G
9.1
Ω)
t
f
− 18 50
Gate Charge
(S Fi 8)
Q
T
− 12.2 17 nC
(See Figure 8)
(V
DS
= 48 Vdc, I
D
= 12 Adc,
Q
1
− 3.2 −
(V
DS
48
Vdc
,
I
D
12
Adc
,
V
GS
= 10 Vdc)
Q
2
− 5.2 −
Q
3
− 5.5 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1.)
(I
S
= 12 Adc, V
GS
= 0 Vdc)
(I
S
= 12 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
1.0
0.91
1.6
−
Vdc
Reverse Recovery Time
(S Fi 15)
t
rr
− 56 −
ns
(See Figure 15)
(I =12Adc V = 0 Vdc
t
a
− 40 −
(I
S
= 12 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/µs)
t
b
− 16 −
Reverse Recovery Stored
Charge
dI
S
/dt
=
100
A/µs)
Q
RR
− 0.128 − µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L
D
− 4.5 − nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
− 7.5 − nH
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.