Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMTD3055V, MOSFET N channel 60V

 Semiconductor Components Industries, LLC, 2003

November, 2003 − Rev. 4

1 Publication Order Number:

MTD3055V/D

MTD3055V

Preferred Device

Power MOSFET

12 Amps, 60 Volts

N−Channel DPAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

• Avalanche Energy Specified

• I

DSS

and V

DS(on)

Specified at Elevated Temperature

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain−Source Voltage V

DSS

60 Vdc

Drain−Gate Voltage (R

= 1.0 MΩ) V

DGR

60 Vdc

Gate−Source Voltage

− Continuous

− Non−repetitive (t

≤ 10 ms)

GSM

± 20

± 25

Vdc

Vpk

Drain Current − Continuous @ 25°C

Drain Current − Continuous @ 100°C

Drain Current − Single Pulse (t

≤ 10 µs)

7.3

Adc

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

Total Power Dissipation @ T

= 25°C (Note 2)

0.32

2.1

Watts

W/°C

Watts

Operating and Storage Temperature Range T

, T

stg

−55 to

175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

= 25°C

= 25 Vdc, V

= 10 Vdc,

= 12 Apk, L = 1.0 mH, R

= 25 Ω )

72 mJ

Thermal Resistance

− Junction to Case

− Junction to Ambient (Note 1)

− Junction to Ambient (Note 2)

3.13

100

71.4

°C/W

Maximum Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260 °C

1. When surface mounted to an FR4 board using the minimum recommended

pad size.

2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.

N−Channel

http://onsemi.com

60 V 100 m

DS(on)

TYP

12 A

MAXV

(BR)DSS

Gate

Source

Drain

DPAK

CASE 369C

Style 2

MARKING DIAGRAMS

3055V Device Code

Y = Year

WW = Work Week

Gate

Source

Drain

DPAK

CASE 369D

Style 2

YWW

3055V

YWW

3055V

Device Package Shipping

ORDERING INFORMATION

MTD3055V DPAK 75 Units/Rail

MTD3055V−1

DPAK

Straight Lead

75 Units/Rail

MTD3055VT4 DPAK

2500 Tape &

Reel

Summary of content (8 pages)

PAGE 1
MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
PAGE 2
MTD3055V ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 − − 65 − − Vdc mV/°C − − − − 10 100 − − 100 nAdc 2.0 − 2.7 5.4 4.0 − Vdc mV/°C − 0.10 0.15 Ohm − − 1.3 − 2.2 1.9 gFS 4.0 5.0 − mhos Ciss − 410 500 pF Coss − 130 180 Crss − 25 50 td(on) − 7.0 10 tr − 34 60 td(off) − 17 30 tf − 18 50 QT − 12.2 17 Q1 − 3.2 − Q2 − 5.2 − Q3 − 5.5 − − − 1.0 0.91 1.
PAGE 3
MTD3055V TYPICAL ELECTRICAL CHARACTERISTICS 24 VGS = 10 V TJ = 25°C I D , DRAIN CURRENT (AMPS) 9V 20 I D , DRAIN CURRENT (AMPS) 24 8V 7V 16 12 6V 8 5V 4 VDS ≥ 10 V TJ = − 55°C 20 100°C 25°C 16 12 8 4 4V 0 1 0.3 2 3 4 0 5 6 7 9 8 Figure 2. Transfer Characteristics 0.2 TJ = 100°C 0.15 25°C 0.1 − 55°C 0.05 0 4 8 12 16 ID, DRAIN CURRENT (AMPS) 20 24 0.15 10 TJ = 25°C 0.14 0.13 0.12 VGS = 10 V 0.11 0.1 15 V 0.09 0.08 0 Figure 3.
PAGE 4
MTD3055V POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (∆t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used.
PAGE 5
QT 10 50 VGS Q1 8 Q2 40 6 30 4 2 0 20 ID = 12 A TJ = 25°C VDS Q3 0 1 2 3 4 5 6 7 8 9 10 11 12 10 0 13 1000 t, TIME (ns) 60 12 VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) MTD3055V VDD = 30 V ID = 12 A VGS = 10 V TJ = 25°C 100 tr td(off) tf td(on) 10 1 1 10 QT, TOTAL CHARGE (nC) RG, GATE RESISTANCE (OHMS) Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 9.
PAGE 6
MTD3055V SAFE OPERATING AREA 75 10 µs VGS = 20 V SINGLE PULSE TC = 25°C 10 100 µs 1 ms 10 ms 1.0 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 10 1.0 ID = 12 A EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) I D , DRAIN CURRENT (AMPS) 100 50 25 0 100 25 50 75 100 125 150 175 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12.
PAGE 7
MTD3055V PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− C B V SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.
PAGE 8
MTD3055V PACKAGE DIMENSIONS DPAK CASE 369D−01 ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.