Data Sheet

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 6
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Typical Performance Characteristics
Figure 3. Normalized CTR vs. Forward Current
I
F
– FORWARD CURRENT (mA)
0 2 4 6 8 101214161820
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
= 5.0 V
T
A
= 25˚C
Normalized to
I
F
= 10 mA
Figure 4. Normalized CTR vs. Ambient Temperature
T
A
– AMBIENT TEMPERATURE (˚C)
-60 -40 -20 0 20 40 60 80 100
NORMALIZE
D CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
Normalized to:
I
F
= 10 mA
T
A
= 25˚C
Figure 5. CTR vs. RBE (Unsaturated)
R
BE
– BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
CE
= 5.0 V
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
Figure 6. CTR vs. RBE (Saturated)
SWITCHING SPEED (μs)
Figure 7. Switching Speed vs. Load Resistor
R – LOAD RESISTOR (kΩ)
0.1 1 10 100
0.1
1
10
100
1000
T
off
T
on
T
f
I
F
= 10 mA
V
CC
= 10 V
T
A
= 25˚C
T
r
R
BE
– BASE RESISTANCE (kΩ)
R
BE
– BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
V
CE
= 0.3 V
NORMALIZED
t
on
– (t
on(R
BE
)
/ t
on(open)
)
Figure 8. Normalized t
on
vs. R
BE
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
CC =
10 V
I
C
= 2 mA
R
L
= 100 Ω