Data Sheet

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 5
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Electrical Characteristics (Continued)
T
A
= 25°C unless otherwise specified.
AC Characteristics
Isolation Characteristics
Symbol Parameters Test Conditions
Device
Min. Typ. Max. Units
NON-SATURATED SWITCHING TIME
t
on
Turn-On Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100 Ω All Devices 2.0 10.0 µs
t
off
Turn-Off Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100 Ω All Devices 3.0 10.0 µs
t
d
Delay Time I
F
= 10 mA, V
CC
= 5 V, R
L
= 75 Ω CNY17XM/CNY17FXM 5.6 µs
t
r
Rise Time I
F
= 10 mA, V
CC
= 5 V, R
L
= 75 Ω CNY17XM/CNY17FXM 4.0 µs
t
s
Storage Time I
F
= 10 mA, V
CC
= 5 V, R
L
= 75 Ω CNY17XM/CNY17FXM 4.1 µs
t
f
Fall Time I
F
= 10 mA, V
CC
= 5 V, R
L
= 75 Ω CNY17XM/CNY17FXM 3.5 µs
SATURATED SWITCHING TIMES
t
d
Delay Time
I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 kΩ CNY171M/F1M 5.5 µs
I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 kΩ
CNY172M/3M/4M
CNY17F2M/F3M/F4M
8.0 µs
t
r
Rise Time
I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 kΩ CNY171M/F1M 4.0 µs
I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 kΩ
CNY172M/3M/4M
CNY17F2M/F3M/F4M
6.0 µs
t
s
Storage Time
I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 kΩ CNY171M/F1M 34.0 µs
I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 kΩ
CNY172M/3M/4M
CNY17F2M/F3M/F4M
39.0 µs
t
f
Fall Time
I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 kΩ CNY171M/F1M 20.0 µs
I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 kΩ
CNY172M/3M/4M
CNY17F2M/F3M/F4M
24.0 µs
Symbol Characteristic Test Conditions Min. Typ. Max. Units
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
C
ISO
Isolation Capacitance V
I-O
= 0 V, f = 1 MHz 0.2 pF
R
ISO
Isolation Resistance V
I-O
= ±500 VDC, T
A
= 25°C 10
11
Ω