Data Sheet

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 4
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Symbol Parameters Test Conditions Device Min. Typ. Max. Units
EMITTER
V
F
Input Forward Voltage
I
F
= 10 mA All Devices 1.0 1.15 1.50 V
I
F
= 60 mA
CNY17XM,
CNY17FXM
1.0 1.35 1.65
V
C
J
Capacitance V
F
= 0 V, f = 1.0 MHz All Devices 18 pF
I
R
Reverse Leakage
Current
V
R
= 6 V All Devices 0.001 10 µA
DETECTOR
BV
CEO
Breakdown Voltage
Collector-to-Emitter I
C
= 1 mA, I
F
= 0 All Devices 70 100 V
BV
CBO
Collector-to-Base I
C
= 10 µA, I
F
= 0 CNY17XM 70 120
V
BV
ECO
Emitter-to-Collector I
E
= 100 µA, I
F
= 0 All Devices 7 10
V
I
CEO
Leakage Current
Collector-to-Emitter V
CE
= 10 V, I
F
= 0 All Devices 1 50 nA
I
CBO
Collector-to-Base V
CB
= 10 V, I
F
= 0 CNY17XM 20 nA
C
CE
Capacitance
Collector-to-Emitter V
CE
= 0, f = 1 MHz All Devices 8 pF
C
CB
Collector-to-Base V
CB
= 0, f = 1 MHz CNY17XM 20 pF
C
EB
Emitter-to-Base V
EB
= 0, f = 1 MHz CNY17XM 10 pF
Symbol Parameters Test Conditions
Device
Min. Typ. Max. Units
COUPLED
CTR
Current Transfer
Ratio
I
F
= 10 mA, V
CE
= 10 V MOC8106M 50 150 %
I
F
= 10 mA, V
CE
= 5 V CNY171M, CNY17F1M 40 80
%
I
F
= 10 mA, V
CE
= 5 V CNY172M, CNY17F2M 63 125
%
I
F
= 10 mA, V
CE
= 5 V CNY173M, CNY17F3M 100 200
%
I
F
= 10 mA, V
CE
= 5 V CNY174M, CNY17F4M 160 320
%
V
CE(SAT)
Collector-Emitter
Saturation Voltage
I
C
= 0.5 mA, I
F
= 5 mA MOC8106M
0.4 V
I
C
= 2.5 mA, I
F
= 10 mA CNY17XM/CNY17FXM