Data Sheet

©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8021M, MOC8050M Rev. 3.2 4
MOC8021M, MOC8050M — 6-Pin DIP Photodarlington Optocoupler (No Base Connection)
Electrical Characteristics
T
A
= 25°C Unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 10 mA 1.18 2.00 V
I
R
Reverse Leakage Current V
R
= 3.0 V 0.001 10 µA
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage
MOC8021M
I
C
= 1.0 mA, I
F
= 0
50 100 V
MOC8050M 80 100 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 100 µA, I
F
= 0 5 10 V
I
CEO
Collector-Emitter Dark Current V
CE
= 60 V, I
F
= 0 1 µA
C
CE
Capacitance V
CE
= 0 V, f = 1 MHz 8 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
DC CHARACTERISTICS
CTR
Current Transfer Ratio,
Collector to Emitter
MOC8021M I
F
= 10 mA, V
CE
= 5 V 1,000 %
MOC8050M I
F
= 10 mA, V
CE
= 1.5 V 500 %
AC CHARACTERISTICS
t
on
Turn-on Time
I
F
= 5 mA, V
CC
= 10 V,
R
L
= 100 Ω
8.5 µs
t
off
Turn-off Time
I
F
= 5 mA, V
CC
= 10 V,
R
L
= 100 Ω
95 µs
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
C
ISO
Isolation Capacitance V
I-O
= 0 V, f = 1 MHz 0.2 pF
R
ISO
Isolation Resistance V
I-O
= ±500 VDC, T
A
= 25°C 10
11
Ω