Data Sheet
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M Rev. 1.5 4
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Zero Crossing Characteristics
Isolation Characteristics
Notes:
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
3. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended operating
I
F
lies between max I
FT
(15 mA for MOC3081M, 10 mA for MOC3082M, 5 mA for MOC3083M) and absolute
maximum I
F
(60 mA).
4. Isolation voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and
pins 4, 5 and 6 are common.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 30 mA 1.3 1.5 V
I
R
Reverse Leakage Current V
R
= 6 V 0.005 100 μA
DETECTOR
I
DRM1
Peak Blocking Current, Either Direction V
DRM
= 800 V, I
F
= 0
(1)
10 500 nA
dv/dt Critical Rate of Rise of Off-State Voltage I
F
= 0 (Figure 11)
(2)
600 1500 V/μs
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
I
FT
LED Trigger Current
(Rated I
FT
)
Main Terminal
Voltage = 3 V
(3)
MOC3081M 15
mAMOC3082M 10
MOC3083M 5
V
TM
Peak On-State Voltage,
Either Direction
I
TM
= 100 mA peak,
I
F
= rated I
FT
All 1.8 3.0 V
I
H
Holding Current, Either Direction All 500 μA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
INH
Inhibit Voltage (MT1-MT2 voltage
above which device will not trigger)
I
F
= Rated I
FT
12 20 V
I
DRM2
Leakage in Inhibited
State
I
F
= Rated I
FT
,
V
DRM
= 600 V, off-state
2mA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
ISO
Isolation Voltage
(4)
f = 60 Hz, t = 1 Minute 4170 VAC
RMS
R
ISO
Isolation Resistance V
I-O
= 500 V
DC
10
11
Ω
C
ISO
Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF