Data Sheet

MOC3051M, MOC3052M, MOC3053M
www.onsemi.com
4
Symbol Parameters Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage
I
F
= 10 mA
1.18 1.50 V
I
R
Reverse Leakage Current
V
R
= 3 V
0.05 100 µA
DETECTOR
I
DRM
Peak Blocking Current, Either Direction
V
DRM
= 600 V, I
F
= 0 (Note 2)
10 100 nA
V
TM
Peak On-State Voltage, Either Direction
I
TM
= 100 mA peak, I
F
= 0
2.2 2.5 V
dv/dt Critical Rate of Rise of Off-State Voltage
I
F
= 0, V
DRM
= 600 V
1000 V/µs
TRANSFER CHARACTERISTICS
Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit
I
FT
LED Trigger Current, Either Direction
Main Terminal
Voltage = 3 V (Note 3)
MOC3051M 15
mA MOC3052M 10
MOC3053M 6
I
H
Holding Current, Either Direction All 540 µA
ISOLATION CHARACTERISTICS
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage (Note 4) f = 60 Hz, t = 1 Minute 4170 VAC
RMS
R
ISO
Isolation Resistance
V
I-O
= 500 V
DC
10
11
Ω
C
ISO
Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF
2. Test voltage must be applied within dv/dt rating.
3. All devices will trigger at an I
F
value greater than or equal to the maximum I
FT
specification. For optimum operation over temperature and
lifetime of the device, the LED should be biased with an I
F
that is at least 50% higher than the maximum I
FT
specification. The I
F
should
not exceed the absolute maximum rating of 60 mA.
Example: For MOC3052M, the minimum I
F
bias should be 10 mA x 150% = 15 mA
4. Isolation voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are
common.
ELECTRICAL CHARACTERISTICS
T
A
= 25°C unless otherwise specified.
INDIVIDUAL COMPONENT CHARACTERISTICS