Data Sheet

MOC3051M, MOC3052M, MOC3053M
www.onsemi.com
3
MAXIMUM RATINGS (Note 1)
T
A
= 25°C unless otherwise specified.
Symbol Parameters Value Unit
Total Device
T
STG
Storage Temperature -40 to +150 °C
T
OPR
Operating Temperature -40 to +85 °C
T
J
Junction Temperature Range -40 to +100 °C
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
P
D
Total Device Power Dissipation at 25°C Ambient 330 mW
Derate Above 25°C 4.4 mW/°C
Emitter
I
F
Continuous Forward Current 60 mA
V
R
Reverse Voltage 3 V
P
D
Total Power Dissipation at 25°C Ambient 100 mW
Derate Above 25°C 1.33 mW/°C
Detector
V
DRM
Off-State Output Terminal Voltage 600 V
I
TSM
Peak Non-Repetitive Surge Current (Single Cycle 60 Hz Sine Wave) 1 A
P
D
Total Power Dissipation at 25°C Ambient 300 mW
Derate Above 25°C 4 mW/°C
1. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.