Data Sheet

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5 4
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage
MOC216M, MOC217M I
F
= 1 mA 1.07 1.3 V
MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M
I
F
= 10 mA 1.15 1.5 V
I
R
Reverse Leakage Current V
R
= 6 V 0.001 100 µA
C
IN
Input Capacitance 18 pF
DETECTOR
I
CEO1
Collector-Emitter Dark Current
V
CE
= 10 V, T
A
= 25°C 1.0 50 nA
I
CEO2
V
CE
= 10 V, T
A
= 100°C 1.0 µA
BV
CEO
Collector-Emitter Breakdown Voltage
MOC205M, MOC206M, MOC207M I
C
= 100 µA 70 100 V
MOC211M, MOC212M, MOC213M,
MOC216M, MOC217M
I
C
= 100 µA 30 100 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= 10 µA 70 120 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 100 µA 7 10 V
C
CE
Collector-Emitter Capacitance f = 1.0 MHz, V
CE
= 0 7 pF
COUPLED
CTR
Collector-Output Current
MOC205M I
F
= 10 mA, V
CE
= 10 V 40 80 %
MOC206M I
F
= 10 mA, V
CE
= 10 V 63 125 %
MOC207M I
F
= 10 mA, V
CE
= 10 V 100 200 %
MOC211M I
F
= 10 mA, V
CE
= 10 V 20 %
MOC212M I
F
= 10 mA, V
CE
= 10 V 50 %
MOC213M I
F
= 10 mA, V
CE
= 10 V 100 %
MOC216M I
F
= 1 mA, V
CE
= 5 V 50 %
MOC217M I
F
= 1 mA, V
CE
= 5 V 100 %
V
CE(SAT)
Collector-Emitter Saturation Voltage
MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M
I
C
= 2 mA, I
F
= 10 mA 0.4 V
MOC216M, MOC217M I
C
= 100 µA, I
F
= 1 mA 0.4 V
t
on
Turn-On Time
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 Ω (Figure 12)
7.5 µs
t
off
Turn-Off Time
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 Ω (Figure 12)
5.7 µs
t
r
Rise Time
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 Ω (Figure 12)
3.2 µs
t
f
Fall Time
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 Ω (Figure 12)
4.7 µs