Datasheet

MMSD4148T1G, SMMSD4148T1G, MMSD4148T3G, SMMSD4148T3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
BR
= 100 mA)
V
(BR)
100 −
V
Reverse Voltage Leakage Current
(V
R
= 20 V)
(V
R
= 75 V)
I
R
−
−
25
5.0
nA
mA
Forward Voltage
(I
F
= 10 mA)
V
F
− 1000
mV
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
C
D
− 4.0
pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA) (Figure 1)
t
rr
− 4.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
3. t
p
» t
rr
+10 V
2 k
820 W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit