Data Sheet

FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 4
Typical Performance Characteristics
Figure 7. Typical Pulsed Current Gain vs.
Collector Current
Figure 8. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 9. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 10. Base-Emitter On Voltage vs.
Collector Current
Figure 11. Collector Cut-Off Current vs.
Ambient Temperature
Figure 12. Capacitance vs. Reverse Bias Voltage
0. 1 1 10 1 00
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β
= 10
125 °C
- 40 °C
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β = 10
25 °C
125 °C
- 40 °C
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
C
ob
C
ib
f = 1.0 MHz