Data Sheet

FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 3
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0 mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10 μA, I
E
= 0 60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10 μA, I
C
= 0 6.0 V
I
BL
Base Cut-Off Current V
CE
= 30 V, V
BE
= -3 V 50 nA
I
CEX
Collector Cut-Off Current V
CE
= 30 V, V
BE
= -3 V 50 nA
On Characteristics
(3)
h
FE
DC Current Gain
FFB3904, FMB3904
I
C
= 0.1 mA, V
CE
= 1.0 V
40
MMPQ3904 30
FFB3904, FMB3904
I
C
= 1.0 mA, V
CE
= 1.0 V
70
MMPQ3904 50
FFB3904, FMB3904
I
C
= 10 mA, V
CE
= 1.0 V
100 300
MMPQ3904 75
All Devices I
C
= 50 mA, V
CE
= 1.0 V 60
All Devices I
C
= 100 mA, V
CE
= 1.0 V 30
V
CE
(sat) Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA 0.2
V
I
C
= 50 mA, I
B
= 5.0 mA 0.3
V
BE
(sat) Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA 0.65 0.85
V
I
C
= 50 mA, I
B
= 5.0 mA 0.95
Small-Signal Characteristics (MMPQ3904 only)
f
T
Current Gain-Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
250 MHz
C
ob
Output Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 140 kHz
4.0 pF
C
ib
Input Capacitance
V
BE
= 0.5 V, I
C
= 0,
f = 140 kHz
8.0 pF