Data Sheet

FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 4
Typical Performance Characteristics
Figure 7. Typical Pulsed Current Gain vs.
Collector Current
Figure 8. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 9. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 10. Base-Emitter On Voltage vs.
Collector Current
Figure 11. Collector Cut-Off Current vs.
Ambient Temperature
Fig ure 12. Emi tter Tran sition an d Output
Capacitance vs. Reverse Bias Voltage
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
1 10 100 500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CES AT
25 °C
C
β
= 10
125 °C
- 40 °C
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β = 10
25 °C
125 °C
- 40 °C
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE (ON )
C
V = 5V
CE
25 °C
125 °C
- 40 °C
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 40V
CB
CBO
°
0.1 1 10 100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
f = 1 MHz
C
ob
C
te