Data Sheet

FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 3
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Typ. Max. Unit
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(3)
I
C
= 10 mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10 μA, I
E
= 0 75 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10 μA, I
C
= 0 5.0 V
I
CBO
Collector Cut-Off Current V
CB
= 60 V, I
E
= 0 10 nA
I
EBO
Emitter Cut-Off Current V
EB
= 3.0 V, I
C
= 0 10 nA
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V 35
I
C
= 1.0 mA, V
CE
= 10 V 50
I
C
= 10 mA, V
CE
= 10 V 75
I
C
= 150 mA, V
CE
= 10 V
(3)
100 300
I
C
= 150 mA, V
CE
= 1.0 V
(3)
50
I
C
= 500 mA, V
CE
= 10 V
(3)
40
V
CE
(sat) Collector-Emitter Saturation Voltage
(3)
I
C
= 150 mA, I
B
= 15 mA 0.3
V
I
C
= 500 mA, I
B
= 50 mA 1.0
V
BE
(sat) Base-Emitter Saturation Voltage
(3)
I
C
= 150 mA, I
B
= 15 mA 1.2
V
I
C
= 500 mA, I
B
= 50 mA 2.0
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 20 V,
f = 100 MHz
300 MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0,
f = 100 kHz
4.0 pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0,
f = 100 kHz
20 pF
NF Noise Figure
I
C
= 100 μA, V
CE
= 10 V,
R
S
= 1.0 kΩ, f = 1.0 kHz
2.0 dB
t
d
Delay Time
V
CC
= 30 V, V
BE(OFF)
= 0.5 V,
I
C
= 150 mA, I
B1
= 15 mA
8ns
t
r
Rise Time 20 ns
t
s
Storage Time
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
180 ns
t
f
Fall Time 40 ns