Datasheet

MMBT3906L, SMMBT3906L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
40
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
BL
50
nAdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
CEX
50
nAdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
H
FE
60
80
100
60
30
300
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
0.25
0.4
Vdc
Base Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.65
0.85
0.95
Vdc
SMALL SIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
250
MHz
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
4.5
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
10
pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
ie
2.0 12
kW
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
re
0.1 10
X 10
4
SmallSignal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
100 400
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
3.0 60
mmhos
Noise Figure
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= 0.5 Vdc,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
t
d
35
ns
Rise Time t
r
35
Storage Time
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc,
I
B1
= I
B2
= 1.0 mAdc)
t
s
225
ns
Fall Time t
f
75
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.