Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsSmall Signal Transistor, SOT-23, PNP, -40V

December, 2013 − Rev. 11

1 Publication Order Number:

MMBT3906LT1/D

MMBT3906L, SMMBT3906L

General Purpose Transistor

PNP Silicon

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

−40 Vdc

Collector−Base Voltage V

CBO

−40 Vdc

Emitter−Base Voltage V

EBO

−5.0 Vdc

Collector Current − Continuous I

−200 mAdc

Collector Current − Peak (Note 3) I

−800 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR− 5 Board

(Note 1) @ T

= 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient

556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) @ T

= 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient

417 °C/W

Junction and Storage Temperature T

, T

stg

−55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

http://onsemi.com

Device Package Shipping

†

ORDERING INFORMATION

MMBT3906LT1G SOT−23

(Pb−Free)

3,000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT3906LT3G SOT−23

(Pb−Free)

10,000 / Tape &

Reel

COLLECTOR

BASE

EMITTER

SOT−23 (TO−236)

CASE 318

STYLE 6

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

2A M G

2A = Specific Device Code

M = Date Code*

G = Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

SMMBT3906LT1G SOT−23

(Pb−Free)

3,000 / Tape &

Reel

SMMBT3906LT3G SOT−23

(Pb−Free)

10,000 / Tape &

Reel

Summary of content (7 pages)

PAGE 1
MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.
PAGE 2
MMBT3906L, SMMBT3906L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −40 − −40 − −5.0 − − −50 − −50 60 80 100 60 30 − − 300 − − − − −0.25 −0.4 −0.65 − −0.85 −0.95 250 − − 4.5 − 10 2.0 12 0.1 10 100 400 3.0 60 − 4.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −1.
PAGE 3
MMBT3906L, SMMBT3906L 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k +0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% CS < 4 pF* 1N916 10 < t1 < 500 ms 10.9 V t1 DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.
PAGE 4
MMBT3906L, SMMBT3906L TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 IC = 0.
PAGE 5
MMBT3906L, SMMBT3906L TYPICAL STATIC CHARACTERISTICS 1000 VCE = 1 V hFE, DC CURRENT GAIN TJ = 150°C 25°C - 55°C 100 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 Figure 14. Collector Saturation Region http://onsemi.com 5 2.0 3.0 5.0 7.
PAGE 6
MMBT3906L, SMMBT3906L 1.4 0.45 0.35 25°C −55°C 0.30 0.25 0.20 0.15 0.10 0.05 0.001 0.01 0.1 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 15. Collector Emitter Saturation Voltage vs. Collector Current Figure 16. Base Emitter Saturation Voltage vs. Collector Current 1.4 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VCE = 1 V 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 1.2 0.0001 0.001 0.01 0.
PAGE 7
MMBT3906L, SMMBT3906L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.