Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsSmall Signal Transistor, SOT-23, NPN, 40V

November, 2012 − Rev. 12

1 Publication Order Number:

MMBT3904LT1/D

MMBT3904L, SMMBT3904L

General Purpose Transistor

NPN Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

40 Vdc

Collector−Base Voltage V

CBO

60 Vdc

Emitter−Base Voltage V

EBO

6.0 Vdc

Collector Current − Continuous I

200 mAdc

Collector Current − Peak (Note 3) I

900 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR− 5 Board

(Note 1) @T

= 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient

556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2)

= 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient

417 °C/W

Junction and Storage Temperature T

, T

stg

−55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

COLLECTOR

BASE

EMITTER

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOT−23 (TO−236)

CASE 318

STYLE 6

MARKING DIAGRAM

1AM = Specific Device Code

M = Date Code*

G = Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

1AM M G

Device Package Shipping

†

ORDERING INFORMATION

MMBT3904LT3G

SMMBT3904LT3G

SOT−23

(Pb−Free)

MMBT3904LT1G

SMMBT3904LT1G

SOT−23

(Pb−Free)

3000 / Tape &

Reel

10,000 / Tape &

Reel

Summary of content (7 pages)

PAGE 1
MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • http://onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.
PAGE 2
MMBT3904L, SMMBT3904L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc IBL − 50 nAdc ICEX − 50 nAdc 40 70 100 60 30 − − 300 − − − − 0.2 0.3 0.65 − 0.85 0.
PAGE 3
MMBT3904L, SMMBT3904L TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 7.0 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) VCC = 40 V IC/IB = 10 3000 Cibo 3.0 Cobo 2.0 1000 700 500 QT 300 200 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 70 50 20 30 40 1.0 2.0 3.0 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance 20 30 50 70 100 200 Figure 4. Charge Data 500 500 IC/IB = 10 100 70 tr @ VCC = 3.
PAGE 4
MMBT3904L, SMMBT3904L TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 SOURCE RESISTANCE = 500 W IC = 100 mA 2 0 0.1 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.
PAGE 5
MMBT3904L, SMMBT3904L TYPICAL STATIC CHARACTERISTICS 1000 h FE, DC CURRENT GAIN TJ = +150°C VCE = 1.0 V +25°C 100 - 55°C 10 1 0.1 1.0 100 10 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region http://onsemi.com 5 2.0 3.0 5.0 7.
PAGE 6
MMBT3904L, SMMBT3904L IC/IB = 10 IC/IB = 10 0.7 150°C 0.6 25°C 0.5 −55°C 0.4 0.3 0.2 0.1 0 0.001 0.01 0.1 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. Collector Emitter Saturation Voltage vs. Collector Current Figure 18. Base Emitter Saturation Voltage vs. Collector Current 1.4 1.0 1.2 VCE = 1 V +25°C TO +125°C 0.5 1.0 0.8 1.2 0.
PAGE 7
MMBT3904L, SMMBT3904L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.