Data Sheet

MMBT2369 / PN2369 — NPN Switching Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 2
Electrical Characteristics T
a
= 25°C unless otherwise noted
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 10mA, I
B
= 0 15 V
V
(BR)CES
Collector-Emitter Breakdown Voltage I
C
= 10μA, V
BE
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10μA, I
E
= 0 40 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10μA, I
C
= 0 4.5 V
I
CBO
Collector Cutoff Current V
CB
= 20V, I
E
= 0
V
CB
= 20V, I
E
= 0, T
a
= 125°C
0.4
30
μA
μA
On Characteristics
h
FE
DC Current Gain * I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 2.0V
40
20
120
V
CE(sat)
Collector-Emitter Saturation Voltage * I
C
= 10mA, I
B
= 1.0mA 0.25 V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= 10mA, I
B
= 1.0mA 0.7 0.85 V
Small Signal Characteristics
C
obo
Output Capacitance V
CB
= 5.0V, I
E
= 0, f = 1.0MHz 4.0 pF
C
ibo
Input Capacitance V
EB
= 0.5V, I
C
= 0, f = 1.0MHz 5.0 pF
h
fe
Small -Signal Current Gain I
C
= 10mA, V
CE
= 10V, R
G
= 2.0kΩ,
f = 100MHz
5.0
Switching Characteristics
t
s
Storage Time I
B1
= I
B2
= I
C
= 10mA 13 ns
t
on
Turn-On Time V
CC
= 3.0V, I
C
= 10mA, I
B1
= 3.0mA 12 ns
t
off
Turn-Off Time V
CC
= 3.0V, I
C
= 10mA, I
B1
= 3.0mA,
I
B2
= 1.5mA
18 ns