Data Sheet

MMBT2369 / PN2369 — NPN Switching Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2369 / PN2369 Rev. 1.0.0 1
February 2008
MMBT2369 / PN2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
• Sourced from process 21.
Absolute Maximum Ratings * T
a
= 25×C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
a
= 25°C unless otherwise noted
* Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”.
Symbol Parameter Ratings Units
V
CEO
Collector-Emitter Voltage 15 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 4.5 V
I
C
Collector Current - Continuous 200 mA
I
CP
**Collector Current (Pulse) 400 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
SOT-23
B
E
C
Mark: 1J
TO-92
1. Emitter 2. Base 3. Collector
1
MMBT2369 PN2369