Data Sheet

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT2222A / PZT2222A Rev. 1.1.0 4
Typical Performance Characteristics
Figure 3. Typical Pulsed Current Gain
vs. Collector Current
Figure 4. Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 6. Base-Emitter On Voltage
vs. Collector Current
Figure 7. Collector Cut-Off Current
vs. Ambient Temperature
Figure 8. Emitter Transition and Output Capacitance
vs. Reverse Bias Voltage
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
1 10 100 500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
E
S
A
T
25 㿐
C
E
= 10
125 㿐
- 40 㿐
qC
qC
qC
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
B
E
S
A
T
C
E
= 10
25 㿐
125 㿐
- 40 㿐
qC
qC
qC
I
C
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE (ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
I
C
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 40V
CB
CBO
°
0.1 1 10 100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
f = 1 MHz
C
ob
C
te