Data Sheet

MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBFJ309 / MMBFJ310 Rev. 1.5 2
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= -1.0 μA, V
DS
= 0 -25 V
I
GSS
Gate Reverse Current
V
GS
= -15 V, V
DS
= 0 -1.0 nA
V
GS
= -15 V, V
DS
= 0, T
A
= 125°C -1.0 μA
V
GS(off)
Gate-Source Cut-Off Voltage V
DS
= 10 V, I
D
= 1.0 nA
MMBFJ309 -1.0 -4.0
V
MMBFJ310 -2.0 -6.5
On Characteristics
I
DSS
Zero-Gate Voltage Drain
Current
(4)
V
DS
= 10 V, V
GS
= 0
MMBFJ309 12 30
mA
MMBFJ310 24 60
V
GS(f)
Gate-Source Forward Voltage V
DS
= 0, I
G
= 1.0 mA 1.0 V
Small Signal Characteristics
Re
(yis)
Common-Source Input
Conductance
V
DS
= 10 V, I
D
= 10 mA,
f = 100 MHz
MMBFJ309 0.7
mmhos
MMBFJ310 0.5
Re
(yos)
Common-Source Output
Conductance
V
DS
= 10 V, I
D
= 10 mA, f = 100 MHz 0.25 mmhos
G
pg
Common-Gate Power Gain V
DS
= 10 V, I
D
= 10 mA, f = 100 MHz 16 dB
Re
(yfs)
Common-Source Forward
Transconductance
V
DS
= 10 V, I
D
= 10 mA, f = 100 MHz 12 mmhos
Re
(yig)
Common-Gate Input
Conductance
V
DS
= 10 V, I
D
= 10 mA, f = 100 MHz 12 mmhos
g
fs
Common-Source Forward
Transconductance
V
DS
= 10 V, I
D
= 10 mA,
f = 1.0 kHz
MMBFJ309 10000 20000
μmhos
MMBFJ310 8000 18000
g
oss
Common-Source Output
Conductance
V
DS
= 10 V, I
D
= 10 mA, f = 1.0 kHz 150 μmhos
g
fg
Common-Gate Forward
Conductance
V
DS
= 10 V, I
D
= 10 mA,
f = 1.0 kHz
MMBFJ309 13000
μmhos
MMBFJ310 12000
g
og
Common-Gate Output
Conductance
V
DS
= 10 V, I
D
= 10 mA,
f = 1.0 kHz
MMBFJ309 100
μmhos
MMBFJ310 150
C
dg
Drain-Gate Capacitance V
DS
= 0, V
GS
= -10 V, f = 1.0 MHz 2.0 2.5 pF
C
sg
Source-Gate Capacitance V
DS
= 0, V
GS
= -10 V, f = 1.0 MHz 4.1 5.0 pF
NF Noise Figure V
DS
= 10 V, I
D
= 10 mA, f = 450 MHz 3.0 dB
e
n
Equivalent Short-Circuit Input
Noise Voltage
V
DS
= 10 V, I
D
= 10 mA, f = 100 Hz 6.0
nV/ Hz