Data Sheet

MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBFJ309 / MMBFJ310 Rev. 1.5
January 2015
MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Ordering Information
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm
2
.
Part Number Top Mark Package Packing Method
MMBFJ309 6U SOT-23 3L Tape and Reel
MMBFJ310 6T SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
V
DG
Drain-Gate Voltage 25 V
V
GS
Gate-Source Voltage -25 V
I
GF
Forward Gate Current 10 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150 °C
Symbol Parameter Max. Unit
P
D
Total Device Dissipation 350 mW
Derate Above 25°C2.8mW/°C
R
θJA
Thermal Resistance, Junction-to-Ambient 357 °C/W
Description
This device is designed for VHF/UHF amplifier, oscil-
lator and mixer applications. As a common gate
amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz
can be realized. Sourced from process 92. Source &
Drain are interchangeable.
SOT-23
G
D
S
Note: Source & Drain
are interchangeable