Data Sheet

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch
www.onsemi.com
2
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings
are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm
2
.
Symbol Parameter Value Unit
V
DG
Drain-Gate Voltage 35 V
V
GS
Gate-Source Voltage -35 V
I
GF
Forward Gate Current 50 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150 °C
Symbol Parameter
Max.
Unit
J111 / J112 /
J113
(3)
MMBFJ111 /
MMBFJ112 /
MMBFJ113
(4)
P
D
Total Device Dissipation 625 350 mW
Derate Above 25°C5.02.8mW/°C
R
θJC
Thermal Resistance, Junction-to-Case 125 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 200 357 °C/W