Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMOSFET 1 N-channel 350

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch

Publication Order Number:

MMBFJ113/D

October-2017, Rev. 2

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /

MMBFJ113

N-Channel Switch

Features

• This device is designed for low level analog switching,

sample and hold circuits and chopper stabilized amplifiers.

• Sourced from process 51

• Source & Drain are interchangeable.

Ordering Information

Figure 1. J111 / J112 / J113 Device Package Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113

Device Package

Part Number Top Mark Package Packing Method

J111 J111 TO-92 3L Bulk

J111-D26Z

J111 TO-92 3L Tape and Reel

111-D74Z

J111 TO-92 3L Ammo

J112 J112 TO-92 3L Bulk

J112-D26Z

J112 TO-92 3L Tape and Reel

J112-D27Z

J112 TO-92 3L Tape and Reel

J112-D74Z

J112 TO-92 3L Ammo

J113 J113 TO-92 3L Bulk

J113-D74Z

J113 TO-92 3L Ammo

113-D75Z

J113 TO-92 3L Ammo

MMBFJ111 6P SOT-23 3L Tape and Reel

MMBFJ112 6R SOT-23 3L Tape and Reel

MMBFJ113 6S SOT-23 3L Tape and Reel

TO-92

SOT-23

Note: Source & Drain

are interchangeable

Summary of content (10 pages)

PAGE 1
Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G G S S TO-92 SOT-23 D Figure 1. J111 / J112 / J113 Device Package D Note: Source & Drain are interchangeable Figure 2.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
PAGE 3
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) ID(off) Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0 Gate Reverse Current VGS = -15 V, VDS = 0 Gate-Source Cut-Off Voltage VDS = 15 V, ID = 1.0 μA Drain Cutoff Leakage Current -35 V -1.0 111 -3.0 -10.0 112 -1.0 -5.0 113 -0.5 -3.0 VDS = 5.0 V, VGS = -10 V 1.
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- TRANSCONDUCTANCE (mmhos) 6 - 0.6 V 4 - 0.8 V - 1.0 V D 2 0 - 1.2 V fs I - 1.4 V 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) 2 g - DRAIN CURRENT (mA) - 0.4 V r DS 50 50 g 20 I DSS _5 - DRAIN CURRENT (mA) 125°C 25°C - 55°C V DS = 15 V _ 5 10 VGS(off) = - 1.6 V V DS = 15 V - 55°C 25°C 125°C 12 8 VGS(off) = - 1.1 V 125°C 25°C - 55°C D 4 I I D - DRAIN CURRENT (mA) 25°C 125°C VGS(off) = - 2.
PAGE 5
r DS - NORMALIZED RESISTANCE ( Ω ) r DS - DRAIN "ON" RESISTANCE (Ω) 100 125°C V GS(off) TYP = - 2.0V 50 25°C 125°C V GS(off) - 55°C TYP = - 7.0V 20 25°C r DS @ V GS = 0 - 55°C 10 1 2 ID 5 10 20 - DRAIN CURRENT (mA) 50 100 TA = 25°C V DG = 15V f = 1.0 kHz 10 V GS(off) = - 1.4V 1 I D - DRAIN CURRENT (mA) 10 Figure 11. Transconductance vs. Drain Current √ e n - NOISE VOLTAGE (nV / Hz) C is (C rs ) - CAPACITANCE (pF) 5 2 1 0 0.2 0.4 0.6 0.
PAGE 6
V DG = 15V P D - POWER DISSIPATION (mW) e n - NOISE VOLTAGE (nV / √ Hz) 100 f = 10 Hz f = 100 Hz f = 1.0 kHz 10 f = 10 kHz f = 100 kHz 1 0.01 I D 0.1 1 - DRAIN CURRENT (mA) 700 600 300 200 100 0 10 t r APPROX. I D INDEPENDENT VGS(off) = 3.0V 15 T A = 25°C I D = 6.6 mA 10 2.5 mA - 6.0V t d (ON) V GS = -12V 5 0 0 V GS(off) -2 -4 -6 -8 -10 - GATE-SOURCE CUTOFF VOLTAGE (V) Figure 17. Switching Turn-On Time vs.
PAGE 7
D Figure 19. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type www.onsemi.
PAGE 8
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Physical Dimensions (Continued) Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type www.onsemi.
PAGE 9
0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.
PAGE 10
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