Data Sheet

MMBFJ110 — N-Channel Switch
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBFJ110 Rev. 1.1 2
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm
2
.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
P
D
Total Device Dissipation 460 mW
Derate Above 25°C3.68mW/°C
R
θJA
Thermal Resistance, Junction-to-Ambient 270 °C/W
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= -10 μA, V
DS
= 0 -25 V
I
GSS
Gate Reverse Current
V
GS
= -15 V, V
DS
= 0 -3.0
nA
V
GS
= -15 V, V
DS
= 0, T
A
= 100°C -200
V
GS
(off) Gate-Source Cut-Off Voltage V
DS
= 15 V, I
D
= 10 nA -0.5 -4.0 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current
(4)
V
DS
= 15 V, V
GS
= 0 10 mA
r
DS
(on) Drain-Source On Resistance V
DS
≤ 0.1 V, V
GS
= 0 18 Ω
Small Signal Characteristics
C
dg
(on)
C
sg
(on)
Drain-Gate &Source-Gate On
Capacitance
V
DS
= 0, V
GS
= 0, f = 1.0 MHz 85 pF
C
dg
(off)
C
sg
(off)
Drain-Gate & Source-Gate Off
Capacitance
V
DS
= 0, V
GS
= -10 V, f = 1.0 MHz 15 pF