Data Sheet

MMBFJ110 — N-Channel Switch
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBFJ110 Rev. 1.1
February 2015
MMBFJ110
N-Channel Switch
Features
• This device is designed for digital switching applications
where very low on resistance is mandatory.
• Sourced from process 58
Ordering Information
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Part Number Top Mark Package Packing Method
MMBFJ110 110 SSOT 3L Tape and Reel
Symbol Parameter Value Unit
V
DG
Drain-Gate Voltage 25 V
V
GS
Gate-Source Voltage -25 V
I
GF
Forward Gate Current 10 mA
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature Range -55 to 150 °C
1. Drain 2. Source 3. Gate
Marking : 110
SuperSOT-3
1
2
3