Datasheet

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G
http://onsemi.com
5
Figure 10. Effect of I
DSS
on Drain−Source
Resistance and Gate−Source Voltage
I
DSS
, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
, DRAIN-SOURCE ON-STATE
DS(on)
r
20
10
30
40
50
30 40 50 60
70
20
RESISTANCE (OHMS)
0
10
0
1.0
2.0
3.0
4.0
5.0
, GATE-SOURCE VOLTAGE
GS
V
(VOLTS)
T
channel
= 25°C
V
GS(off)
r
DS(on)
@ V
GS
= 0
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero−Gate−Voltage Drain Current (I
DSS
) is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (V
GS(off)
) and Drain−Source On Resistance
(r
DS(on)
) to I
DSS
. Most of the devices will be within
±10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for
a given part number.
For example:
Unknown
r
DS(on)
and V
GS
range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an I
DSS
range of 25 to 75 mA. Figure
10 shows r
DS(on)
= 52 W for I
DSS
= 25 mA and 30 W for
I
DSS
= 75 mA. The corresponding V
GS
values are 2.2 V
and 4.8 V.