Datasheet

© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 10
1 Publication Order Number:
MMBF4391LT1/D
MMBF4391LT1G,
SMMBF4391LT1G,
MMBF4392LT1G,
MMBF4393LT1G
JFET Switching Transistors
NChannel
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
DrainSource Voltage V
DS
30 Vdc
DrainGate Voltage V
DG
30 Vdc
GateSource Voltage V
GS
30 Vdc
Forward Gate Current I
G(f)
50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, JunctiontoAmbient
R
q
JA
556 °C/W
Junction and Storage Temperature Range T
J
, T
stg
55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 0.75 0.062 in.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT23
CASE 318
STYLE 10
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
MARKING & ORDERING INFORMATION
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
XXX = Specific Device Code
M = Date Code*
G = PbFree Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
MARKING DIAGRAM
1
XXX M G
G
2
1
3

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