Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsPower Transistor, TO-225, PNP, 300V

February, 2006 − Rev. 13

1 Publication Order Number:

MJE350/D

MJE350

Plastic Medium Power

PNP Silicon Transistor

This device is designed for use in line−operated applications such as

low power, line−operated series pass and switching regulators

requiring PNP capability.

Features

• High Collector−Emitter Sustaining Voltage −

CEO(sus)

= 300 Vdc @ I

= 1.0 mAdc

• Excellent DC Current Gain −

= 30−240 @ I

= 50 mAdc

• Plastic Thermopad Package

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎÎ

CEO

ÎÎÎÎ

300

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Voltage

ÎÎÎÎ

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current − Continuous

ÎÎÎÎ

500

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ T

= 25_C

Derate above 25_C

ÎÎÎÎ

0.16

ÎÎÎ

mW/_C

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

, T

stg

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

–65 to +150

ÎÎÎ

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Case

ÎÎÎÎ

6.25

ÎÎÎ

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage

= 1.0 mAdc, I

= 0)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

CEO(sus)

ÎÎ

300

ÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

= 300 Vdc, I

= 0)

ÎÎÎÎ

CBO

ÎÎ

−

ÎÎÎ

100

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

= 3.0 Vdc, I

= 0)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

EBO

ÎÎ

−

ÎÎÎ

100

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

= 50 mAdc, V

= 10 Vdc)

ÎÎÎÎ

ÎÎ

ÎÎÎ

240

ÎÎÎ

−

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

MJE350 TO−225 500 Units/Box

0.5 AMPERE

POWER TRANSISTOR

PNP SILICON

300 VOLTS, 20 WATTS

http://onsemi.com

MJE350G

TO−225

(Pb−Free)

500 Units/Box

TO−225

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

J350G

Y = Year

WW = Work Week

J350 = Device Code

G = Pb−Free Package

Summary of content (3 pages)

PAGE 1
MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector−Emitter Sustaining Voltage − • • • 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 20 WATTS VCEO(sus) = 300 Vdc @ IC = 1.
PAGE 2
MJE350 hFE , DC CURRENT GAIN 100 1.0 TJ = 150°C TJ = 25°C 0.8 25°C 70 50 − 55 °C 30 20 20 30 10 20 IC/IB = 10 VCE(sat) 50 70 100 200 300 0 500 Figure 1. DC Current Gain Figure 2. “On” Voltages 100 ms dc 1.0 ms 500 ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C SECOND BREAKDOWN LIMITED 30 50 70 100 200 300 400 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 5.0 7.0 10 IC/IB = 5.
PAGE 3
MJE350 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C Q M −A− 1 2 3 H K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.