Datasheet

Plastic Medium Power PNP
Silicon Transistor
. . . designed for use in line–operated applications such as low
power, line–operated series pass and switching regulators requiring
PNP capability.
• High Collector–Emitter Sustaining Voltage —
V
CEO(sus)
= 300 Vdc @ I
C
= 1.0 mAdc
• Excellent DC Current Gain —
h
FE
= 30–240 @ I
C
= 50 mAdc
• Plastic Thermopad Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
300 Vdc
Emitter–Base Voltage V
EB
3.0 Vdc
Collector Current — Continuous I
C
500 mAdc
Total Power Dissipation @ T
C
= 25C
Derate above 25C
P
D
20
0.16
Watts
W/C
Operating and Storage Junction Temperature
Range
T
J
, T
stg
–65 to +150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case θ
JC
6.25 C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
CEO(sus)
300 — Vdc
Collector Cutoff Current
(V
CB
= 300 Vdc, I
E
= 0)
I
CBO
— 100 µAdc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
— 100 µAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
h
FE
30 240 —
ON Semiconductor
 Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 11
1 Publication Order Number:
MJE350/D
MJE350
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS
20 WATTS
CASE 77–09
TO–225AA TYPE