Datasheet

MJE340G
http://onsemi.com
2
28
0
T
C
, CASE TEMPERATURE (°C)
0
20 40 80 120 160
20
12
P
D
, POWER DISSIPATION (WATTS)
MJE340
32
24
16
8.0
4.0
1.0
10
I
C
, COLLECTOR CURRENT (mA)
0
20 30 50 100 200 500
0.4
0.8
0.6
V, VOLTAGE (VOLTS)
0.2
300
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 10 V
Figure 1. Power Temperature Derating
Figure 2. “On” Voltages
60 100 140
I
C
/I
B
= 5.0
Figure 3. MJE340
1.0
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.5
0.01
50 100
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT T
C
= 25°C
SINGLE PULSE
I
C
,
COLLECTOR
CURRENT
(AMP)
dc
10 ms
0.3
0.05
20 30
1.0ms
200 300
0.2
70
0.1
0.03
0.02
T
J
= 150°C
500 ms
ACTIVE−REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.The data of Figure 3 is
based on T
J(pk)
= 150_C; T
C
is variable depending on
conditions. Second breakdown pulse limits are valid for
duty cycles to 10% provided T
J(pk)
150_C. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.