Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsN/A MJE 3055 T NPN MJE 3055 T NPN

September, 2013 − Rev. 11

1 Publication Order Number:

MJE2955T/D

MJE2955T (PNP),

MJE3055T (NPN)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and

switching applications.

Features

• High Current Gain − Bandwidth Product

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

60 Vdc

Collector−Base Voltage V

70 Vdc

Emitter−Base Voltage V

5.0 Vdc

Collector Current I

10 Adc

Base Current I

6.0 Adc

Total Device Dissipation

@ T

= 25°C

Derate above 25°C

(Note 1) 75

0.6

W/°C

Operating and Storage Junction

Temperature Range

, T

stg

−55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and

must be observed.

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

1.67 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 VOLTS − 75 WATTS

http://onsemi.com

MARKING DIAGRAM

MJExx55T = Device Code

xx = 29 or 30

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MJExx55TG

AY WW

Device Package Shipping

ORDERING INFORMATION

MJE2955TG TO−220

(Pb−Free)

50 Units / Rail

MJE3055TG TO−220

(Pb−Free)

50 Units / Rail

BASE

EMITTER 3

COLLECTOR 2, 4

BASE

EMITTER 3

COLLECTOR 2, 4

PNP NPN

TO−220

CASE 221A

STYLE 1

Summary of content (4 pages)

PAGE 1
MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector−Base Voltage VCB 70 Vdc Emitter−Base Voltage VEB 5.
PAGE 2
MJE2955T (PNP), MJE3055T (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max 60 − − 700 − − 1.0 5.0 − − 1.0 10 − 5.0 20 5.0 100 − − − 1.1 8.0 − 1.8 2.0 − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.
PAGE 3
MJE2955T (PNP), MJE3055T (NPN) 10 7.0 5.0 IC, COLLECTOR CURRENT (AMP) 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ(pk) = 150°C. TC is variable depending on conditions.
PAGE 4
MJE2955T (PNP), MJE3055T (NPN) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B SEATING PLANE C F T S 4 1 2 3 U H K Z L R V J INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 DIM A B C D F G H J K L N Q R S T U V Z A Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3.