Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsN/A MJE 3055 T NPN MJE 3055 T NPN

February, 2006 − Rev. 7

1 Publication Order Number:

MJE2955T/D

MJE2955T (PNP)

MJE3055T (NPN)

Preferred Device

Complementary Silicon

Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and

switching applications.

Features

• DC Current Gain Specified to 10 A

• High Current Gain − Bandwidth Product −

= 2.0 MHz (Min) @ I

= 500 mAdc

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

60 Vdc

Collector−Base Voltage V

70 Vdc

Emitter−Base Voltage V

5.0 Vdc

Collector Current I

10 Adc

Base Current I

6.0 Adc

Total Device Dissipation @ T

= 25_C

Derate above 25°C

(Note 1)

0.6

W/_C

Operating and Storage Junction

Temperature Range

, T

stg

−55 to +150

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

1.67

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and

must be observed.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 VOLTS − 75 WATTS

TO−220AB

CASE 221A−09

STYLE 11

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

MARKING DIAGRAM

MJExx55 = Device Code

xx = 29 or 30

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MJExx55G

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

Summary of content (4 pages)

PAGE 1
MJE2955T (PNP) MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • DC Current Gain Specified to 10 A • High Current Gain − Bandwidth Product − • http://onsemi.com fT = 2.
PAGE 2
MJE2955T (PNP) MJE3055T (NPN) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ
PAGE 3
MJE2955T (PNP) MJE3055T (NPN) 500 90 VCE = 2.0 V TJ = 150°C 100 25°C 50 − 55 °C 30 20 10 5.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 80 PD, POWER DISSIPATION (WATTS) hFE , DC CURRENT GAIN 300 200 5.0 70 60 50 MJE3055T MJE2955T 40 30 20 10 0 10 0 25 50 75 100 125 TC, CASE TEMPERATURE (°C) Figure 2. DC Current Gain MJE2955T TJ = 25°C 1.2 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 5.0 10 MJE3055T 1.4 1.2 0.8 175 Figure 3. Power Derating 2.0 1.
PAGE 4
MJE2955T (PNP) MJE3055T (NPN) PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.