Datasheet

MJE18004G, MJF18004G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 100 mA, L = 25 mH) V
CEO(sus)
450 − − Vdc
Collector Cutoff Current (V
CE
= Rated V
CEO
, I
B
= 0) I
CEO
− − 100
mAdc
Collector Cutoff Current (V
CE
= Rated V
CES
, V
EB
= 0) (T
C
= 25_C)
(T
C
= 125_C)
Collector Cutoff Current (V
CE
= 800 V, V
EB
= 0) (T
C
= 125_C)
I
CES
−
−
−
−
−
−
100
500
100
mAdc
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I
C
= 0) I
EBO
− − 100
mAdc
ON CHARACTERISTICS
Base−Emitter Saturation Voltage (I
C
= 1.0 Adc, I
B
= 0.1 Adc)
Base−Emitter Saturation Voltage (I
C
= 2.0 Adc, I
B
= 0.4 Adc)
V
BE(sat)
−
−
0.82
0.92
1.1
1.25
Vdc
Collector−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
(I
C
= 2.0 Adc, I
B
= 0.4 Adc)
(I
C
= 2.5 Adc, I
B
= 0.5 Adc)
(T
C
= 125_C)
(T
C
= 125_C)
V
CE(sat)
−
−
−
−
−
0.25
0.29
0.3
0.36
0.5
0.5
0.6
0.45
0.8
0.75
Vdc
DC Current Gain (I
C
= 1.0 Adc, V
CE
= 2.5 Vdc)
DC Current Gain (I
C
= 0.3 Adc, V
CE
= 5.0 Vdc)
DC Current Gain (I
C
= 2.0 Adc, V
CE
= 1.0 Vdc)
DC Current Gain (I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(T
C
= 125_C)
(T
C
= 125_C)
(T
C
= 125_C)
h
FE
12
−
14
−
6.0
−
10
21
20
−
32
11
7.5
22
−
−
34
−
−
−
−
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz) f
T
− 13 − MHz
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz) C
ob
− 50 65 pF
Input Capacitance (V
EB
= 8.0 V) C
ib
− 800 1000 pF
Dynamic Saturation Voltage:
Determined 1.0 ms and
3.0 ms respectively after
rising I
B1
reaches 90% of
final I
B1
(see Figure 18)
(I
C
= 1.0 Adc
I
B1
= 100 mAdc
V
CC
= 300 V)
1.0 ms
(T
C
= 125°C)
V
CE(dsat)
−
−
6.8
14
−
−
Vdc
3.0 ms
(T
C
= 125°C)
−
−
2.4
5.6
−
−
(I
C
= 2.0 Adc
I
B1
= 400 mAdc
V
CC
= 300 V)
1.0 ms
(T
C
= 125°C)
−
−
11.3
15.5
−
−
3.0 ms
(T
C
= 125°C)
−
−
1.3
6.1
−
−