Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsPower Transistor, TO-220, NPN, 400V

April, 2010 − Rev. 6

1 Publication Order Number:

MJE13007/D

MJE13007G

SWITCHMODEt

NPN Bipolar Power Transistor

For Switching Power Supply Applications

The MJE13007G is designed for high−voltage, high−speed power

switching inductive circuits where fall time is critical. It is particularly

suited for 115 and 220 V SWITCHMODE applications such as

Switching Regulators, Inverters, Motor Controls, Solenoid/Relay

drivers and Deflection circuits.

Features

• V

CEO(sus)

400 V

• Reverse Bias SOA with Inductive Loads @ T

= 100°C

• 700 V Blocking Capability

• SOA and Switching Applications Information

• Standard TO−220

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage V

CEO

400 Vdc

Collector−Base Breakdown Voltage V

CES

700 Vdc

Emitter−Base Voltage V

EBO

9.0 Vdc

Collector Current − Continuous

− Peak (Note 1)

8.0

Adc

Base Current − Continuous

− Peak (Note 1)

4.0

8.0

Adc

Emitter Current − Continuous

− Peak (Note 1)

Adc

Total Device Dissipation @ T

= 25_C

Derate above 25°C

0.64

W/_C

Operating and Storage Temperature T

, T

stg

−65 to 150

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

1.56

_C/W

Thermal Resistance, Junction−to−Ambient

62.5

_C/W

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

260

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*Measurement made with thermocouple contacting the bottom insulated mounting

surface of the package (in a location beneath the die), the device mounted on a

heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

POWER TRANSISTOR

8.0 AMPERES

400 VOLTS − 80 WATTS

TO−220AB

CASE 221A−09

STYLE 1

http://onsemi.com

MARKING DIAGRAM

MJE13007G

AY WW

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

Device Package Shipping

ORDERING INFORMATION

MJE13007G TO−220

(Pb−Free)

50 Units / Rail

Summary of content (10 pages)

PAGE 1
MJE13007G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features • • • • • • http://onsemi.com POWER TRANSISTOR 8.
PAGE 2
MJE13007G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 − − Vdc − − − − 0.1 1.0 − − 100 OFF CHARACTERISTICS (Note 2) Collector−Emitter Sustaining Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCES = 700 Vdc) (VCES = 700 Vdc, TC = 125°C) ICES Emitter Cutoff Current (VEB = 9.
PAGE 3
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) MJE13007G VBE(sat), BASE-EMITTER SATURATION VOLTAGE (VOLTS) 1.4 IC/IB = 5 1.2 1 0.8 TC = - 40°C 25°C 0.6 5 IC/IB = 5 2 1 0.5 0.2 TC = - 40°C 0.1 25°C 0.05 100°C 0.4 0.01 0.02 10 0.05 0.1 0.2 0.5 1 2 5 0.02 0.01 0.01 0.02 10 100°C 0.05 0.1 0.2 0.5 1 2 5 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. Base−Emitter Saturation Voltage Figure 2.
PAGE 4
MJE13007G 10 Extended SOA @ 1 ms, 10 ms 20 10 5 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 50 1 ms 10 ms TC = 25°C 2 1 0.5 DC 1 ms 5 ms 0.2 0.1 0.05 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.02 0.01 10 20 30 8 TC ≤ 100°C GAIN ≥ 4 LC = 500 mH 6 4 VBE(off) -5 V 2 0 0 50 70 100 200 300 500 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Maximum Reverse Bias Switching Safe Operating Area Figure 6.
PAGE 5
MJE13007G SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS INTRODUCTION at 25°C and 100°C. Increasing the reverse bias will give some improvement in device blocking capability. The sustaining or active region voltage requirements in switching applications occur during turn−on and turn−off. If the load contains a significant capacitive component, high current and voltage can exist simultaneously during turn−on and the pulsed forward bias SOA curves (Figure 6) are the proper design limits.
PAGE 6
MJE13007G Table 1. Test Conditions For Dynamic Performance RESISTIVE SWITCHING REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING VCC TEST CIRCUITS +15 V 150 W 3 W 1 mF MTP8P10 MTP8P10 100 W 3 W 100 mF MUR105 +10 V RC RB1 IC MJE210 A RB2 50 W Vclamp = 300 Vdc IB TUT RB IB 150 W 3 W 500 mF +125 V MUR8100E MPF930 MPF930 COMMON SCOPE 5.
PAGE 7
MJE13007G SWITCHING TIME NOTES In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and any coil driver, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined.
PAGE 8
MJE13007G SWITCHING PERFORMANCE 10000 7000 5000 VCC = 125 V IC/IB = 5 IB(on) = IB(off) TJ = 25°C PW = 25 ms tr VCC = 125 V IC/IB = 5 IB(on) = IB(off) TJ = 25°C PW = 25 ms ts 2000 t, TIME (ns) 1000 1000 700 500 100 tf 200 td 10 100 1 2 3 4 5 6 IC, COLLECTOR CURRENT (AMP) 7 8 9 10 1 2 3 4 5 6 IC, COLLECTOR CURRENT (AMP) Figure 10.
PAGE 9
MJE13007G Table 2. Applications Examples of Switching Circuits CIRCUIT LOAD LINE DIAGRAMS SERIES SWITCHING REGULATOR TURN-ON (FORWARD BIAS) SOA ton ≤ 10 ms VO VCC COLLECTOR CURRENT 16 A A PD = 3200 W 2 300 V ton TURN-OFF (REVERSE BIAS) SOA 1.
PAGE 10
MJE13007G PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.