Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsDarlington Transistor, DPAK, PNP, 100V

December, 2005 − Rev. 7

1 Publication Order Number:

MJD122/D

MJD122 (NPN)

MJD127 (PNP)

Preferred Device

Complementary Darlington

Power Transistor

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Surface Mount Replacements for 2N6040−2N6045 Series,

TIP120−TIP122 Series, and TIP125−TIP127 Series

• Monolithic Construction With Built−in Base−Emitter Shunt Resistors

• High DC Current Gain: h

= 2500 (Typ) @ I

= 4.0 Adc

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

100 Vdc

Collector−Base Voltage V

100 Vdc

Emitter−Base Voltage V

5 Vdc

Collector Current − Continuous

− Peak

Adc

Base Current I

120 mAdc

Total Power Dissipation @ T

= 25°C

Derate above 25°C

0.16

W/°C

Total Power Dissipation (Note 1)

@ T

= 25°C

Derate above 25°C

1.75

0.014

W/°C

Operating and Storage Junction

Temperature Range

, T

stg

−65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance

Junction−to−Case

6.25 °C/W

Thermal Resistance

Junction−to−Ambient (Note1)

71.4 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

MARKING DIAGRAM

Y = Year

WW = Work Week

x = 2 or 7

G = Pb−Free Package

DPAK

CASE 369C

STYLE 1

Preferred devices are recommended choices for future use

and best overall value.

YWW

J12xG

SILICON

POWER TRANSISTOR

8 AMPERES

100 VOLTS, 20 WATTS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device Package Shipping

†

ORDERING INFORMATION

MJD122 DPAK 75 Units/Rail

MJD122T4 DPAK 2500/Tape & Reel

MJD122T4G DPAK

(Pb−Free)

2500/Tape & Reel

DPAK 75 Units/Rail

MJD127G DPAK

(Pb−Free)

75 Units/Rail

MJD127

DPAK 2500/Tape & Reel

MJD127T4G DPAK

(Pb−Free)

2500/Tape & Reel

http://onsemi.com

MJD122G DPAK

(Pb−Free)

75 Units/Rail

MJD127T4

Summary of content (7 pages)

PAGE 1
MJD122 (NPN) MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications.
PAGE 2
MJD122 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 − Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO − 10 mAdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO − 10 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 2 mAdc 1000 100 12,000 − − − 2 4 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 4 Adc, VCE = 4 Vdc)
PAGE 3
MJD122 (NPN) TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 NPN MJD122 20,000 20,000 VCE = 4 V VCE = 4 V 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 7000 5000 TJ = 150°C 3000 2000 25°C 1000 700 500 300 200 0.1 − 55 °C 0.2 5000 TJ = 150°C 3000 2000 25°C 1000 − 55 °C 500 0.3 0.5 0.7 1 2 3 5 7 300 200 0.1 10 0.2 0.5 0.7 0.
PAGE 4
MJD122 (NPN) TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD122 + 5 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) PNP MJD127 *IC/IB ≤ hFE/3 + 4 + 3 + 2 + 1 0 25°C to 150°C qVC for VCE(sat) − 1 − 55 °C to 25°C 25°C to 150°C − 2 − 3 qVB for VBE − 55 °C to 25°C − 4 − 5 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 + 5 + 4 *IC/IB ≤ hFE/3 + 3 25°C to 150°C + 2 − 55 °C to 25°C + 1 0 *qVC for VCE(sat) − 1 − 2 − 3 − 4 − 5 0.
PAGE 5
MJD122 (NPN) 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC − 30 V RC SCOPE RB 51 ≈ 8 k ≈ 120 D1 +4V 25 ms tf 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf ≤ 10 ns DUTY CYCLE = 1% PNP NPN ts 1 t, TIME ( s) μ TUT V2 APPROX + 8 V 0 V1 APPROX −12 V 3 2 0.2 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
PAGE 6
MJD122 (NPN) COLLECTOR PNP COLLECTOR NPN BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 13. Darlington Schematic http://onsemi.
PAGE 7
MJD122 (NPN) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE −T− E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D 2 PL G 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.