Datasheet

MJD122 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 30 mAdc, I
B
= 0)
V
CEO(sus)
100 − Vdc
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
I
CEO
− 10
mAdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
I
CBO
− 10
mAdc
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
− 2 mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4 Adc, V
CE
= 4 Vdc)
(I
C
= 8 Adc, V
CE
= 4 Vdc)
h
FE
1000
100
12,000
−
−
Collector−Emitter Saturation Voltage
(I
C
= 4 Adc, I
B
= 16 mAdc)
(I
C
= 8 Adc, I
B
= 80 mAdc)
V
CE(sat)
−
−
2
4
Vdc
Base−Emitter Saturation Voltage (Note 2)
(I
C
= 8 Adc, I
B
= 80 mAdc)
V
BE(sat)
− 4.5 Vdc
Base−Emitter On Voltage
(I
C
= 4 Adc, V
CE
= 4 Vdc)
V
BE(on)
− 2.8 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(I
C
= 3 Adc, V
CE
= 4 Vdc, f = 1 MHz)
|h
fe
| 4 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) MJD127
MJD122
C
ob
−
−
300
200
pF
Small−Signal Current Gain
(I
C
= 3 Adc, V
CE
= 4 Vdc, f = 1 kHz)
h
fe
300 − −
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
Figure 1. Power Derating
25
25
T, TEMPERATURE (°C)
0
50 75 100 125 150
20
15
10
5
P
D
, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
T
A
T
C
T
A
SURFACE
MOUNT
T
C