Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsN/A MJ 15024 NPN MJ 15024 NPN

February, 2006 − Rev. 10

1 Publication Order Number:

MJ15022/D

NPN − MJ15022, MJ15024*

*MJ15024 is a Preferred Device

Silicon Power Transistors

The MJ15022 and MJ15024 are PowerBase power transistors

designed for high power audio, disk head positioners and other linear

applications.

Features

• High Safe Operating Area (100% Tested) − 2 A @ 80 V

• High DC Current Gain − h

= 15 (Min) @ I

= 8 Adc

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MJ15022

MJ15024

CEO

200

250

Vdc

Collector−Base Voltage

MJ15022

MJ15024

CBO

350

400

Vdc

Emitter−Base Voltage V

EBO

5 Vdc

Collector−Emitter Voltage V

CEX

400 Vdc

Collector Current − Continuous

− Peak (Note 1)

Adc

Base Current − Continuous I

5 Adc

Total Device Dissipation @ T

= 25_C

Derate above 25_C

250

1.43

W/_C

Operating and Storage Junction

Temperature Range

, T

stg

−65 to +200

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

0.70

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

16 AMPERES

SILICON POWER TRANSISTORS

200 − 250 VOLTS, 250 WATTS

http://onsemi.com

MARKING DIAGRAM

Device Package Shipping

ORDERING INFORMATION

MJ15022 TO−204 100 Units / Tray

MJ15022G TO−204

(Pb−Free)

100 Units / Tray

MJ1502xG

AYWW

MEX

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MJ1502x = Device Code

x = 2 or 4

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MEX = Country of Origin

MJ15024 TO−204 100 Units / Tray

MJ15024G TO−204

(Pb−Free)

100 Units / Tray

Preferred devices are recommended choices for future use

and best overall value.

Summary of content (4 pages)

PAGE 1
NPN − MJ15022, MJ15024* *MJ15024 is a Preferred Device Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http://onsemi.
PAGE 2
NPN − MJ15022, MJ15024* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î
PAGE 3
NPN − MJ15022, MJ15024* C, CAPACITANCE (pF) 4000 3000 f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS TJ = 25°C Cib 1000 500 Cob 100 40 0.3 0.5 1 10 30 50 5.0 VR, REVERSE VOLTAGE (VOLTS) 100 300 9 7 6 5 4 3 2 1 0 0.1 TJ = 100°C VCE = 4 V V, VOLTAGE (VOLTS) 20 10 10 1.4 1.0 0.8 5.0 VBE(on) @ VCE = 4 V TJ = 25°C 100°C 0.2 1.0 0.2 5.0 1.8 TJ = 25°C 50 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 25°C 0 0.15 20 Figure 4.
PAGE 4
NPN − MJ15022, MJ15024* PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. A N C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) M INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.