Datasheet

MJ15003 MJ15004
http://onsemi.com
2
*ELECTRICAL CHARACTERISTICS (T
C
= 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (1)
(I
C
= 200 mAdc, I
B
= 0)
V
CEO(sus)
140 Vdc
Collector Cutoff Current
(V
CE
= 140 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 140 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150C)
I
CEX
100
2
µAdc
mAdc
Collector Cutoff Current
(V
CE
= 140 Vdc, I
B
= 0)
I
CEO
250 µAdc
Emitter Cutoff Current
(V
EB
= 5 Vdc, I
C
= 0)
I
EBO
100 µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Baised
(V
CE
= 50 Vdc, t = 1 s (non repetitive))
(V
CE
= 100 Vdc, t = 1 s (non repetitive))
I
S/b
5
1
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5 Adc, V
CE
= 2 Vdc)
h
FE
25 150
Collector Emitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 0.5 Adc)
V
CE(sat)
1 Vdc
Base Emitter On Voltage
(I
C
= 5 Adc, V
CE
= 2 Vdc)
V
BE(on)
2 Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f
test
= 0.5 MHz)
f
T
2 MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
c
ob
1000 pF
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
I
C
, COLLECTOR CURRENT (AMP)
5
Figure 1. Active–Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5 7 10 200
10
2
2 3 50 70 10020 30
7
20
1
3
0.5
0.2
0.7
0.3
T
C
= 25°C
15
150
T
J
= 200°C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
J(pk)
= 200C; T
C
is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.