Datasheet

Complementary Silicon Power
Transistors
The MJ15003 and MJ15004 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.
• High Safe Operating Area (100% Tested) —
250 W @ 50 V
• For Low Distortion Complementary Designs
• High DC Current Gain —
h
FE
= 25 (Min) @ I
C
= 5 Adc
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
140 Vdc
Collector–Base Voltage V
CBO
140 Vdc
Emitter–Base Voltage V
EBO
5 Vdc
Collector Current — Continuous I
C
20 Adc
Base Current — Continuous I
B
5 Adc
Emitter Current — Continuous I
E
25 Adc
Total Power Dissipation @ T
C
= 25C
Derate above 25C
P
D
250
1.43
Watts
W/C
Operating and Storage Junction Temperature Range T
J
, T
stg
–65 to +200 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θ
JC
0.70 C/W
Maximum Lead Temperature for Soldering Purposes:
1/16″ from Case for  10 seconds
T
L
265 C
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev.8
1 Publication Order Number:
MJ15003/D
MJ15003
MJ15004
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
250 WATTS
NPN
PNP
CASE 1–07
TO–204AA
(TO–3)
*
*ON Semiconductor Preferred Device
*