Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsPower Transistor, TO-204, NPN, 80V

High-Current Complementary

Silicon Power Transistors

. . . designed for use in high–power amplifier and switching circuit

applications,

• High Current Capability —

Continuous = 60 Amperes

• DC Current Gain —

= 15–100 @ I

= 50 Adc

• Low Collector–Emitter Saturation Voltage —

CE(sat)

= 2.5 Vdc (Max) @ I

= 50 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

MJ14001

ÎÎÎÎ

MJ14002

MJ14003

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

CEO

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Base Voltage

ÎÎÎÎ

CBO

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

EBO

ÎÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Current — Continuous

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ T

= 25C

Derate above 25C

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

300

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

, T

stg

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.584

ÎÎÎ

C/W

150

Figure 1. Power Derating

, CASE TEMPERATURE (°C)

40 80 120 240

360

, POWER DISSIPATION (WATTS)

210

0 160 200

270

330

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 4

1 Publication Order Number:

MJ14001/D

MJ14002

MJ14001

MJ14003

*ON Semiconductor Preferred Device

60 AMPERES

COMPLEMENTARY

SILICON

POWER TRANSITORS

60–80 VOLTS

300 WATTS

NPN

PNP

CASE 197A–05

TO–204AE (TO–3)

Summary of content (8 pages)

PAGE 1
ON Semiconductor NPN High-Current Complementary Silicon Power Transistors MJ14002 * . . . designed for use in high–power amplifier and switching circuit applications, MJ14003 * PNP MJ14001 • High Current Capability — • • *ON Semiconductor Preferred Device IC Continuous = 60 Amperes DC Current Gain — hFE = 15–100 @ IC = 50 Adc Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.
PAGE 2
MJ14002 MJ14001 MJ14003 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
PAGE 3
MJ14002 MJ14001 MJ14003 TYPICAL ELECTRICAL CHARACTERISTICS PNP MJ14001, MJ14003 300 200 300 200 100 100 70 50 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN NPN MJ14002 VCE = 3.0 V TJ = - 55°C TJ = 25°C TJ = 150°C 30 20 10 70 50 VCE = 3.0 V TJ = - 55°C TJ = 25°C TJ = 150°C 30 20 10 7.0 5.0 7.0 5.0 3.0 0.7 1.0 2.0 3.0 20 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) 30 50 3.0 0.7 1.0 70 5.0 7.0 10 2.0 3.
PAGE 4
MJ14002 MJ14001 MJ14003 1.0 0.7 0.5 4.0 3.0 2.0 tr 0.3 td 0.1 0.07 0.05 , t, TIME ( s) µ (µ ) 0.2 0.03 0.01 0.7 1.0 1.0 0.7 0.5 tf 0.3 0.2 0.1 0.07 MJ14002 (NPN) MJ14001, MJ14003 (PNP) 0.02 ts 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) 50 MJ14002 (NPN) MJ14001, MJ14003 (PNP) 0.04 0.7 1.0 70 Figure 9. Turn–On Switching Times 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) (p ) , RB 0 10000 7000 5000 tr ≤ 20 ns -12 V 2000 300 TJ = 25°C 2.0 5.0 7.
PAGE 5
MJ14002 MJ14001 MJ14003 PACKAGE DIMENSIONS CASE 197A–05 TO–204AE (TO–3) ISSUE J A N C –T– E D K 2 PL 0.30 (0.012) U V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE T Q M M Y M –Y– L 2 H G B M T Y 1 –Q– 0.25 (0.010) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1.
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MJ14002 MJ14001 MJ14003 Notes http://onsemi.
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MJ14002 MJ14001 MJ14003 Notes http://onsemi.
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MJ14002 MJ14001 MJ14003 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein.