Datasheet

MJ11015 (PNP); MJ11012, MJ11016 (NPN)
http://onsemi.com
2
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈ 8.0 k ≈ 40
PNP
MJ11015
BASE
EMITTER
COLLECTOR
≈ 8.0 k ≈ 40
NPN
MJ11012
MJ11016
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted.)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage(1)
(I
C
= 100 mAdc, I
B
= 0) MJ11012
MJ11015, MJ11016
V
(BR)CEO
60
120
−
−
Vdc
Collector−Emitter Leakage Current
(V
CE
= 60 Vdc, R
BE
= 1k ohm) MJ11012
(V
CE
= 120 Vdc, R
BE
= 1k ohm) MJ11015, MJ11016
(V
CE
= 60 Vdc, R
BE
= 1k ohm, T
C
= 150_C) MJ11012
(V
CE
= 120 Vdc, R
BE
= 1k ohm, T
C
= 150_C) MJ11015, MJ11016
I
CER
−
−
−
−
1
1
5
5
mAdc
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
− 5 mAdc
Collector−Emitter Leakage Current
(V
CE
= 50 Vdc, I
B
= 0)
I
CEO
− 1 mAdc
ON CHARACTERISTICS(1)
DC Current Gain
(I
C
= 20 Adc,V
CE
= 5 Vdc)
(I
C
= 30 Adc, V
CE
= 5 Vdc)
h
FE
1000
200
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 20 Adc, I
B
= 200 mAdc)
(I
C
= 30 Adc, I
B
= 300 mAdc)
V
CE(sat)
−
−
3
4
Vdc
Base−Emitter Saturation Voltage
(I
C
= 20 A, I
B
= 200 mAdc)
(I
C
= 30 A, I
B
= 300 mAdc)
V
BE(sat)
−
−
3.5
5
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product
(I
C
= 10 A, V
CE
= 3 Vdc, f = 1 MHz)
h
fe
4 − MHz
(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.