Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsNPN

September, 2008 − Rev. 5

1 Publication Order Number:

MJ11012/D

MJ11015 (PNP); MJ11012,

MJ11016 (NPN)

MJ11016 is a Preferred Device

High-Current

Complementary Silicon

Transistors

. . . for use as output devices in complementary general purpose

amplifier applications.

• High DC Current Gain −

= 1000 (Min) @ I

− 20 Adc

• Monolithic Construction with Built−in Base Emitter Shunt

Resistor

• Junction Temperature to +200_C

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MJ11012

MJ11015/6

CEO

120

Vdc

Collector−Base Voltage

MJ11012

MJ11015/6

120

Vdc

Emitter−Base Voltage V

5 Vdc

Collector Current I

30 Adc

Base Current I

1 Adc

Total Device Dissipation @ T

= 25°C

Derate above 25°C @ T

= 100°C

200

1.15

W/°C

Operating Storage Junction

Temperature Range

, T

stg

−55 to + 200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

0.87 °C/W

Maximum Lead Temperature for Sol-

dering Purposes for ≤ 10 Seconds

275 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://onsemi.com

30 AMPERE DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 − 120 VOLTS, 200 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING

DIAGRAM

MJ1101x = Device Code

x = 2, 5 or 6

G= Pb−Free Package

A = Location Code

YY = Year

WW = Work Week

MEX = Country of Orgin

MJ1101xG

AYYWW

MEX

Device Package Shipping

ORDERING INFORMATION

MJ11012 TO−3 100 Units/Tray

MJ11012G TO−3

(Pb−Free)

100 Units/Tray

COLLECTOR

CASE

BASE

EMITTER 2

COLLECTOR

CASE

BASE

EMITTER 2

NPN PNP

MJ11016 MJ11015

MJ11012

Preferred devices are recommended choices for future use

and best overall value.

MJ11015 TO−3 100 Units/Tray

MJ11015G TO−3

(Pb−Free)

100 Units/Tray

MJ11016 TO−3 100 Units/Tray

MJ11016G TO−3

(Pb−Free)

100 Units/Tray

Summary of content (4 pages)

PAGE 1
MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt • Resistor Junction Temperature to + 200_C http://onsemi.
PAGE 2
MJ11015 (PNP); MJ11012, MJ11016 (NPN) COLLECTOR PNP MJ11015 BASE COLLECTOR NPN MJ11012 MJ11016 BASE ≈ 8.0 k ≈ 40 ≈ 8.0 k EMITTER ≈ 40 EMITTER Figure 1.
PAGE 3
hFE, DC CURRENT GAIN 30 k 20 k hFE , SMALL-SIGNAL CURRENT GAIN (NORMALIZED MJ11015 (PNP); MJ11012, MJ11016 (NPN) PNP MJ11015 NPN MJ11012, MJ11016 10 k 7k 5k 3k 2k 700 500 VCE = 5 Vdc TJ = 25°C 300 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 20 30 2 1 0.5 0.2 0.1 0.05 PNP MJ11015 NPN MJ11012, MJ11016 0.02 0.01 VCE = 3 Vdc IC = 10 mAdc TJ = 25°C 0.005 10 20 Figure 2. DC Current Gain (1) IC, COLLECTOR CURRENT (AMP) 4 V, VOLTAGE (VOLTS) 500 700 1.
PAGE 4
MJ11015 (PNP); MJ11012, MJ11016 (NPN) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. A N C E D −T− K 2 PL 0.13 (0.005) U V SEATING PLANE T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.