Data Sheet

MDB6S / MDB8S / MDB10S — 1 A, MicroDIP, Single-Phase Bridge Rectifiers
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MDB6S / MDB8S / MDB10S Rev. 1.2.1 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. 60 Hz sine wave, R-load, T
A
= 25°C on FR-4 PCB.
2. 60 Hz sine wave, Non-repetitive 1 cycle peak value, T
J
= 25°C.
Thermal Characteristics
(3)
Note:
3. Device mounted on FR-4 PCB with board size = 76.2 mm x 114.3 mm (JESD51-3 standards).
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise specified.
Symbol Parameter
Value
Units
MDB6S MDB8S MDB10S
V
RRM
Maximum Repetitive Peak Reverse Voltage 600 800 1000 V
V
RMS
Maximum RMS Voltage 420 560 700 V
V
DC
Maximum DC Blocking Voltage 600 800 1000 V
I
F(AV)
Average Rectified Forward Current
(1)
1.0 A
I
FSM
Peak Forward Surge Current
(2)
30 A
I
2
t
I
2
t Rating for fusing (t < 8.3 ms)
3.735 A
2
S
T
J
Operating Junction Temperature Range -55 to +150 °C
T
STG
Storage Temperature Range -55 to +150 °C
Symbol Parameter Typ. Units
R
θJA
Thermal Resistance, Junction-Ambient
Measurement with Dual Dice 250 °C/W
Measurement with Single Die 150 °C/W
ψ
JL
Thermal Characterization, Junction to Lead
Measured at Anode pin 57 °C/W
Measured at Cathode pin 15 °C/W
Symbol Parameter Test condition Value Units
V
F
Maximum Forward Voltage
I
F
= 1 A,
Pulse measurement, Per diode
1.1 V
I
R
Maximum Reverse Current
At V
RRM
,
Pulse measurement, Per diode
10 μA
C
J
Typical Junction Capacitance V
R
= 4 V, f = 1 MHz 10 pF