Data Sheet

©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT9001 8-Pin Dual Channel Phototransistor Optocoupler Rev. 2.0 4
MCT9001 8-Pin Dual Channel Phototransistor Optocoupler
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 10 mA 1.0 1.3 V
I
R
Reverse Leakage Current V
R
= 5 V 10 μA
C
J
Junction Capacitance V
F
= 0 V, f = 1 MHz 50 pF
DETECTOR
BV
CEO
Collector-to-Emitter Breakdown Voltage I
C
= 0.5 mA, I
F
= 0 55 V
BV
ECO
Emitter-to-Collector Breakdown Voltage I
E
= 100 μA, I
F
= 0 7 V
I
CEO
Collector-to-Emitter Dark Current
V
CE
= 24 V, I
F
= 0 5 100 nA
V
CE
= 24 V, T
A
=85°C 50 μA
C
CE
Capacitance V
CE
= 0 V, f = 1 MHz 8 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
DC CHARACTERISTICS
CTR
Current Transfer Ratio, Collector-to-
Emitter
I
F
= 5 mA, V
CE
= 5 V 50 600 %
CTR
(SAT)
I
F
= 8 mA, V
CE
= 0.4 V 30 %
VCE
(SAT)
Saturation Voltage, Collector-to-Emitter I
F
= 8 mA, I
C
= 2.4 mA 0.4 V
AC CHARACTERISTICS
Non-Saturated
T
ON
Turn-On Time
R
L
= 100 Ω, I
C
= 2 mA, V
CC
= 10 V
3.0 µs
T
OFF
Turn-Off Time 3.0 µs
T
R
Rise Time 2.4 µs
T
F
Fall Time 2.4 µs
Saturated
T
ON
Turn-On Time
I
F
= 16 mA, R
L
= 1.9 kΩ, V
CE
= 5 V
2.4 µs
T
OFF
Turn-Off Time 25.0 µs
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage
I
I-O
≤ 10 µA, t = 1 Minute 5,000 VAC
RMS
C
ISO
Isolation Capacitance f = 1 MHz 0.5 pF
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω